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| savantic semiconductor product specification silicon npn power transistors 2SD970 d escription with to-220 package high dc current gain darlington complement to type 2sb791 applications for medium speed and power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 12 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD970 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ;r be =0 120 v v (br)ebo emitter-base breakdown voltage i e =50ma ; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =4a ;i b =8ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =8a ;i b =80ma 3.0 v v besat-1 base-emitter saturation voltage i c =4a ;i b =8ma 2.0 v v besat-2 base-emitter saturation voltage i c =8a ;i b =80ma 3.5 v i cbo collector cut-off current v cb =120v; i e =0 100 a i ceo collector cut-off current v ce =100v; r be = @ 10 a h fe dc current gain i c =4a ; v ce =3v 1000 20000 switching times t on turn-on time 0.4 s t s storage time 5.4 s t f fall time i c =4a ;i b1 =-i b2 =8ma 1.1 s savantic semiconductor product specification 3 silicon npn power transistors 2SD970 package outline fig.2 outline dimensions |
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